ON SEMICONDUCTOR - 2N7000 - MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V. Transistor MOSFET N Channel 60 Volt 0.2 Amp 3 Pin TO-92 Bulk. Allowable Power Dissipation: Pd = 400 mWĦ. onsemi 2N7000 technical specifications, attributes, and parameters. Voltage controlled small signal switch.Ĥ. High density cell design for low Rds(ON)Ģ. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These N-Channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology.
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